Fe3GaTe2/MoSe2 ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices,CrystEngComm

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Fe3GaTe2/MoSe2 ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices
CrystEngComm ( IF 2.6 ) Pub Date : 2023-01-24 , DOI: 10.1039/d2ce01695h
Hongfei Yin _{1,

2} , Pengzhen Zhang _{1,

2} , Wen Jin _{1,

2} , Boyuan Di _{1,

2} , Hao Wu _{1,

2,

3} , Gaojie Zhang _{1,

2} , Wenfeng Zhang _{1,

2} , Haixin Chang _{1,

2,

3}

Affiliation

A spin-valve heterojunction plays a vital role in many technologies such as non-volatile magnetic random-access memories (MRAMs) and high-density magnetic recording. In particular, a spin-valve device based on two-dimensional van der Waals (vdW) heterostructures offers an excellent route for low power consumption and miniaturization of spintronic devices. However, the Curie temperature (T_C) of 2D vdW ferromagnetic crystals is mostly lower than room temperature, and the spin-valve heterostructures of room-temperature ferromagnetic 2D crystals are rare. It is necessary and very challenging to realize the room-temperature spin-valve heterojunctions of 2D ferromagnetic crystals. We prepare a 2D room-temperature, ferromagnetic crystal based 2D vdW Fe₃GaTe₂/MoSe₂/Fe₃GaTe₂ ferromagnet/semiconductor 2D van der Waals heterojunction. The magnetoresistance (MR) of this heterojunction device reaches 3.7% at room temperature (T = 300 K) and 37.7% at 2 K. Importantly the spin-valve effect can still operate at bias currents as low as 10 nA at room temperature in the ferromagnet/semiconductor 2D van der Waals heterojunction. We open a realistic path to 2D magnetic tunnel junctions for next generation spintronic applications at room temperature.

中文翻译：

用于室温自旋阀器件的 Fe3GaTe2/MoSe2 铁磁体/半导体二维范德瓦尔斯异质结

自旋阀异质结在许多技术中起着至关重要的作用，例如非易失性磁性随机存取存储器 (MRAM) 和高密度磁记录。特别是，基于二维范德华 (vdW) 异质结构的自旋阀器件为自旋电子器件的低功耗和小型化提供了极好的途径。然而，二维vdW铁磁晶体的居里温度( T _C )大多低于室温，室温铁磁二维晶体的自旋阀异质结构很少见。实现二维铁磁晶体的室温自旋阀异质结是必要的，也是非常具有挑战性的。_{我们准备了一种基于 2D vdW Fe 3} GaTe ₂的 2D 室温铁磁晶体/MoSe ₂ /Fe ₃ GaTe ₂铁磁体/半导体二维范德瓦尔斯异质结。这种异质结器件的磁阻 (MR) 在室温 ( T = 300 K) 和 2 K 时分别达到 3.7% 和 37.7%。重要的是，自旋阀效应在室温下仍可在低至 10 nA 的偏置电流下工作铁磁体/半导体 2D 范德瓦尔斯异质结。我们为室温下的下一代自旋电子学应用开辟了二维磁隧道结的现实路径。

更新日期：2023-01-24

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