当前位置:
X-MOL 学术
›
ACS Appl. Electron. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-05-09 , DOI: 10.1021/acsaelm.3c00216
Xi Liu 1 , Mengmeng Li 1 , Meng Li 1 , Shouqiang Zhang 1 , Xiaoshi Jin 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-05-09 , DOI: 10.1021/acsaelm.3c00216
Xi Liu 1 , Mengmeng Li 1 , Meng Li 1 , Shouqiang Zhang 1 , Xiaoshi Jin 1
Affiliation
![]() |
In this work, we proposed a structural optimized H-shaped gate bidirectional tunnel field effect transistor with high on-state current based on high Schottky barrier plug-in source–drain contacts and central assistant gate (H-Gate HSB-BTFET). Compared to the previously proposed high Schottky barrier bidirectional tunnel field effect transistor (HSB-BTFET), the proposed H-Gate BTFET achieves excellent switching characteristics such as better forward on-state current, lower subthreshold swing (SS), lower power consumption, higher Ion–Ioff ratio, and lower band to band tunneling (BTBT) induced leakage. The physical mechanism of device performance improvement is explained, analyzed, and compared with HSB-BTFET. In addition, no more complex process technology and expensive millisecond annealing process are needed; the proposed H-Gate BTFET can be used as an alternative candidate for mainstream integration technology.
中文翻译:
结构优化的 H 门高肖特基势垒双向隧道场效应晶体管
在这项工作中,我们提出了一种结构优化的 H 形栅极双向隧道场效应晶体管,它基于高肖特基势垒插入源-漏接触和中央辅助栅极 (H-Gate HSB-BTFET),具有高导通电流。与先前提出的高肖特基势垒双向隧道场效应晶体管 (HSB-BTFET) 相比,提出的 H 栅极 BTFET 实现了出色的开关特性,例如更好的正向导通电流、更低的亚阈值摆幅 (SS)、更低的功耗、更高的我开-我关比和较低的带间隧穿 (BTBT) 引起的泄漏。解释、分析了器件性能提升的物理机制,并与 HSB-BTFET 进行了比较。此外,不需要更复杂的工艺技术和昂贵的毫秒退火工艺;拟议的 H 门 BTFET 可用作主流集成技术的备选方案。
更新日期:2023-05-09
中文翻译:

结构优化的 H 门高肖特基势垒双向隧道场效应晶体管
在这项工作中,我们提出了一种结构优化的 H 形栅极双向隧道场效应晶体管,它基于高肖特基势垒插入源-漏接触和中央辅助栅极 (H-Gate HSB-BTFET),具有高导通电流。与先前提出的高肖特基势垒双向隧道场效应晶体管 (HSB-BTFET) 相比,提出的 H 栅极 BTFET 实现了出色的开关特性,例如更好的正向导通电流、更低的亚阈值摆幅 (SS)、更低的功耗、更高的我开-我关比和较低的带间隧穿 (BTBT) 引起的泄漏。解释、分析了器件性能提升的物理机制,并与 HSB-BTFET 进行了比较。此外,不需要更复杂的工艺技术和昂贵的毫秒退火工艺;拟议的 H 门 BTFET 可用作主流集成技术的备选方案。