Measurement Geometry and Hydrostatic Pressure-Dependent Magnetoresistance in All-Oxide-Based Synthetic Antiferromagnets,Advanced Functional Materials

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Measurement Geometry and Hydrostatic Pressure-Dependent Magnetoresistance in All-Oxide-Based Synthetic Antiferromagnets
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-07-12 , DOI: 10.1002/adfm.202303492
Feng Jin ₁ , Jifeng Shao _{2,

3} , Zixun Zhang ₁ , Wujun Zhang ₄ , Kai Liu ₁ , Jingyuan Li ₂ , Kuan Liu ₁ , Kunjie Dai ₁ , Qing Wang ₁ , Qiming Lv ₁ , Enda Hua ₁ , Pingfan Chen ₅ , Zhen Huang ₅ , Chao Ma ₄ , Lingfei Wang ₁ , Yue Zhao _{2,

6} , Wenbin Wu _{1,

5,

7,

8}

Affiliation

The electronic structure of constituent layers and the spin channel of propagating electrons are critical factors that affect the magnitude and sign of magnetoresistance (MR) in synthetic antiferromagnets (SAFMs), which are important for spintronic applications. However, for all-oxide-based SAFMs, where there is strong coupling between multiple degrees of freedom, spin transport becomes more complex and remains elusive. Here, using ultrathin half-metallic manganite/doped ruthenate SAFMs as a model system, three sign reversals of MR are demonstrated accompanied by the crossover between underlying spin-dependent transport mechanisms. Electron tunneling produces normal MR in the current-perpendicular-to-plane (CPP) geometry at low temperatures, whereas carrier confinement causes inverse MR in the current-in-plane (CIP) geometry. Strikingly, CPP MR can undergo a temperature-driven sign reversal due to resonant tunneling via localized states in the spacer. Moreover, hydrostatic pressure can modulate the interlayer exchange coupling and induce an asymmetric interfacial response to dramatically facilitate electron tunneling, driving a controllable sign reversal of CIP MR. These results provide new insights into understanding and optimization of MR in all-oxide-based SAFMs.

中文翻译：

全氧化物合成反铁磁体中的测量几何形状和静水压相关磁阻

组成层的电子结构和传播电子的自旋通道是影响合成反铁磁体（SAFM）中磁阻（MR）大小和符号的关键因素，这对于自旋电子学应用非常重要。然而，对于全氧化物基 SAFM，多个自由度之间存在强耦合，自旋输运变得更加复杂并且仍然难以捉摸。在这里，使用超薄半金属亚锰酸盐/掺杂钌酸盐 SAFM 作为模型系统，证明了 MR 的三个符号反转以及基础自旋相关输运机制之间的交叉。电子隧道效应在低温下在电流垂直平面 (CPP) 几何结构中产生正向磁流变，而载流子限制则在电流面内 (CIP) 几何结构中产生逆磁流变。引人注目的是，由于间隔物中局部状态的共振隧道效应，CPP MR 可以经历温度驱动的符号反转。此外，静水压力可以调节层间交换耦合并诱导不对称界面响应，从而显着促进电子隧道效应，驱动 CIP MR 的可控符号反转。这些结果为理解和优化全氧化物 SAFM 中的 MR 提供了新的见解。

更新日期：2023-07-12

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