Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D-materials-based dual-gate transistors are expected to meet these demands due to the ultra-thin body and the dangling-bond-free surface. In this work, a molybdenum disulfide (MoS₂) asymmetric-dual-gate field-effect transistor (ADGFET) with an In₂Se₃ top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 10⁶ with a low subthreshold swing of 94.3 mV dec⁻¹ while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge-trapping layer, realizing nonvolatile memory (10⁵ on/off ratio with retention time over 10⁴ s) and six-level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W⁻¹, benefiting from the interface coupling between the double gates. Meanwhile, the photo-memory property of ADGFET is also verified by using the varying exposure dosages-dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture.

中文翻译：

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2D 双栅极场效应晶体管实现多种功能

分布式计算、物联网等先进计算技术需要高度集成、多功能的电子设备。除了硅技术之外，基于 2D 材料的双栅极晶体管由于超薄体和无悬空键表面而有望满足这些要求。在这项工作中，设计了一种具有In ₂ Se _{3顶栅和全局底栅的二硫化钼（MoS 2}）不对称双栅场效应晶体管（ADGFET） 。独立控制的双栅极使该器件能够实现 10 ⁶的开/关比和 94.3 mV dec ^-1的低亚阈值摆幅，同时呈现逻辑功能。双栅极之间的耦合效应使得顶栅极可以作为电荷捕获层，实现非易失性存储器（10 ⁵开/关比，保持时间超过10 ⁴ s）和六级存储状态。此外，得益于双栅极之间的界面耦合，ADGFET表现出可调谐光电探测，响应率达到最高值857 AW ^{-1 。}同时，ADGFET 的光记忆特性也通过使用不同的曝光剂量依赖性照明得到了验证。多功能应用表明 ADGFET 提供了一种将逻辑、存储器和传感集成到一个器件架构中的替代方法。