The gate-all-around (GAA) field-effect transistor (FET) holds great potential to support next-generation integrated circuits. Nanowires such as carbon nanotubes (CNTs) are one important category of channel materials in GAA FETs. Based on first-principles investigations, we propose that SiX₂ (X = S, Se) nanowires are promising channel materials that can significantly elevate the performance of GAA FETs. The sub-5 nm SiX₂ (X = S, Se) nanowire GAA FETs exhibit excellent ballistic transport properties that meet the requirements of the 2013 International Technology Roadmap for Semiconductors (ITRS). Compared to CNTs, they are also advantageous or at least comparable in terms of gate controllability, device dimensions, etc. Importantly, SiSe₂ GAA FETs show superb gate controllability due to the ultralow minimum subthreshold swing (SS_min) that breaks “Boltzmann’s tyranny”. Moreover, the energy-delay product (EDP) of SiX₂ GAA FETs is significantly lower than that of the CNT FETs. These features make SiX₂ nanowires ideal channel material in the sub-5 nm GAA FET devices.

中文翻译：

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适用于 5 nm 以下应用的 SiX2 (X = S, Se) 纳米线全栅极 MOSFET


环栅 (GAA) 场效应晶体管 (FET) 具有支持下一代集成电路的巨大潜力。碳纳米管 (CNT) 等纳米线是 GAA FET 中沟道材料的一类重要材料。基于第一性原理研究，我们提出 SiX ₂ (X = S, Se) 纳米线是有前途的沟道材料，可以显着提高 GAA FET 的性能。亚 5 nm SiX ₂ (X = S, Se) 纳米线 GAA FET 具有出色的弹道传输特性，满足 2013 年国际半导体技术路线图 (ITRS) 的要求。与 CNT 相比，它们在栅极可控性、器件尺寸等方面也具有优势或至少具有可比性。重要的是，SiSe ₂ GAA FET 由于超低的最小亚阈值摆幅 (SS _min ）打破了“玻尔兹曼暴政”。此外，SiX ₂ GAA FET 的能量延迟积（EDP）显着低于 CNT FET。这些特性使 SiX ₂ 纳米线成为 5 nm 以下 GAA FET 器件的理想沟道材料。