The in-plane heterojunctions with atomic-level thickness and chemical-bond-connected tight interfaces possess high carrier separation efficiency and fully exposed surface active sites, thus exhibiting exceptional photocatalytic performance. However, the construction of in-plane heterojunctions remains a significant challenge. Herein, we prepared an in-plane ZnIn₂S₄/In(OH)₃ heterojunction (ZISOH) by partial conversion of ZnIn₂S₄ to In(OH)₃ through the addition of H₂O₂. This in situ oxidation etching–hydrolysis approach enables the ZISOH heterojunction to not only preserve the original nanosheet morphology of ZnIn₂S₄ but also form an intimate interface. Moreover, generated In(OH)₃ serves as an electron-accepting platform and also promotes the adsorption of CO₂. As a result, the heterojunction exhibits a remarkably enhanced performance for photocatalytic CO₂ reduction. The production rate and selectivity of CO reach 1760 μmol g^–1 h^–1 and 78%, respectively, significantly higher than those of ZnIn₂S₄ (842 μmol g^–1 h^–1 and 65%). This work puts forward a feasible and facile approach to construct in-plane heterojunctions to enhance the photocatalytic performance of two-dimensional metal sulfides.

中文翻译：

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原位蚀刻-水解策略构建具有增强 CO2 光还原性能的面内 ZnIn2S4/In(OH)3 异质结


具有原子级厚度和化学键连接的紧密界面的面内异质结具有高载流子分离效率和完全暴露的表面活性位点，从而表现出优异的光催化性能。然而，面内异质结的构建仍然是一个重大挑战。在此，我们通过部分转化ZnIn ₂ /In(OH) ₃ 异质结（ZISOH）。 b3> S ₄ 通过添加 H ₂ O ₂ 转化为 In(OH) ₃ 。这种原位氧化蚀刻-水解方法使ZISOH异质结不仅保留了ZnIn ₂ S ₄ 的原始纳米片形貌，而且形成了紧密的界面。此外，生成的In(OH) ₃ 作为电子接受平台，也促进CO ₂ 的吸附。结果，异质结表现出显着增强的光催化CO ₂ 还原性能。 CO的产率和选择性分别达到1760 μmol g ^–1 h ^–1 和78%，显着高于ZnIn ₂ S ₄ h ^–1 和 65%）。这项工作提出了一种可行且简便的方法来构建面内异质结以增强二维金属硫化物的光催化性能。