In the search for new advanced 2D materials for technological applications and to expand the research of non‐van der Waals (non‐vdW) 2D electronic devices, this study presents a novel strategy for liquid phase exfoliation (LPE) of non‐vdW Cr2S3 to produce Cr2S3 nanosheets (NSs). By utilizing N‐methyl‐2‐pyrrolidone (NMP), bulk Cr2S3 is separated along the (001) plane, resulting in the formation of NSs with an average thickness of ≈3 nm. Various characterization techniques are applied to the Cr2S3 material before and after LPE. Subsequently, the obtained Cr2S3 NSs are integrated into a photoelectrochemical (PEC)‐type photodetector (PD) to evaluate the photoelectric conversion efficiency under varying conditions. The findings indicate that the developed PD exhibits a distinct self‐powered photodetection capability with a photocurrent (Pph) of 39.5 nA cm−2, a photoresponsivity (Rph) of 622 nA W−1, and a detectivity (D*) of 0.5 × 107 Jones under 350 nm irradiation at 0 V. Moreover, the PD demonstrates rapid response time (0.06 s) and good long‐term stability (over 15 days), thus providing valuable insight for the advancement of non‐vdW Cr2S3‐based optoelectronic devices.

中文翻译：

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超薄非范德华硫化铬：液相剥离、表征和自供电光电化学光电探测器应用


在寻找用于技术应用的新型先进二维材料并扩大非范德华 (non-vdW) 二维电子器件的研究时，本研究提出了一种非 vdW Cr2S3 液相剥离 (LPE) 的新策略，以生产 Cr2S3 纳米片 (NSs)。通过利用 N-甲基-2-吡咯烷酮 (NMP)，块状 Cr2S3 沿 (001) 平面分离，从而形成平均厚度约 3 nm 的 NS。在 LPE 之前和之后对 Cr2S3 材料应用了各种表征技术。随后，将获得的 Cr2S3 NS 集成到光电化学（PEC）型光电探测器（PD）中，以评估不同条件下的光电转换效率。研究结果表明，所开发的PD表现出独特的自供电光电探测能力，光电流（Pph）为39.5 nA cm−2，光响应度（Rph）为622 nA W−1，探测率（D*）为0.5 × 107 Jones 在 0 V 350 nm 照射下。此外，PD 表现出快速的响应时间（0.06 s）和良好的长期稳定性（超过 15 天），从而为非 vdW Cr2S3 基光电器件的发展提供了宝贵的见解。